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| D TO-220 G S APT1004RKN APT1004R2KN 1000V 3.6A 4.00 1000V 3.5A 4.20 POWER MOS IV (R) N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol Parameter V DSS ID IDM V GS PD Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25C, Derate Above 25C 1 All Ratings: T C = 25C unless otherwise specified. APT1004R2KN 1000 3.5 14.0 30 125 -55 to 150 APT1004RKN 1000 3.6 14.4 UNIT Volts Amps Amps Volts Watts C TJ,TSTG Operating and Storage Junction Temperature Range STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions / Part Number BVDSS IDSS IGSS ID(ON) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) (VDS = 0.8 VDSS, VGS = 0V, T C = 125C) Gate-Source Leakage Current (VGS = 30V, V DS = 0V) On State Drain Current 2 MIN APT1004RKN APT1004R2KN TYP MAX UNIT Volts Volts 1000 1000 250 1000 100 A nA Amps Amps APT1004RKN APT1004R2KN 3.6 3.5 2 4 4.00 4.20 (VDS > ID(ON) x R DS (ON) Max, VGS = 10V) 2 VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) RDS(ON) Static Drain-Source On-State Resistance (VGS = 10V, ID = 0.5 ID [Cont.]) APT1004RKN APT1004R2KN Volts Ohms Ohms THERMAL CHARACTERISTICS Symbol Characteristic RJC RJA TL Junction to Case Junction to Ambient Max. Lead Temp. for Soldering Conditions: 0.063" from Case for 10 Sec. MIN TYP MAX UNIT C/W C/W C 1.00 80 300 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 050-0036 Rev C USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord DYNAMIC CHARACTERISTICS Symbol Characteristic Ciss Coss Crss Qg Q gs Qgd td(on) tr td(off) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT1004R/1004R2KN Test Conditions VGS = 0V VDS = 25V f = 1 MHz MIN TYP MAX UNIT pF pF pF nC nC nC ns ns ns ns 805 115 37 35 950 160 60 55 6.5 27 20 18 48 46 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time V GS = 10V, ID = ID [Cont.] V DD = 0.5 VDSS 4.3 18 10 VDD = 0.5 VDSS ID = ID [Cont.], VGS = 15V RG = 1.8 9 32 23 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions / Part Number APT1004RKN IS ISM VSD t rr MIN TYP MAX UNIT 3.6 3.5 14.4 14.0 1.3 150 0.8 290 1.65 580 3.3 Amps Amps Amps Amps Volts ns C Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 APT1004R2KN APT1004RKN APT1004R2KN (Body Diode) (VGS = 0V, IS = -ID [Cont.]) 2 Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/s) Reverse Recovery Charge Q rr SAFE OPERATING AREA CHARACTERISTICS Symbol Characteristic SOA1 SOA2 ILM Safe Operating Area Safe Operating Area Inductive Current Clamped Test Conditions / Part Number V DS = 0.4 VDSS , IDS = PD / 0.4 VDSS, t = 1 Sec. IDS = I D [Cont.], MIN TYP MAX UNIT Watts Watts Amps Amps 125 125 14.4 14.0 VDS = PD / ID [Cont.], t = 1 Sec. APT1004RKN APT1004R2KN 1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 1.0 , THERMAL IMPEDANCE (C/W) 0.5 D=0.5 0.2 0.1 0.1 0.05 0.05 0.02 0.01 0.01 SINGLE PULSE Note: PDM t1 t2 2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t 050-0036 Rev C Z JC 0.004 10-5 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 APT1004R/1004R2KN 5 V I D , DRAIN CURRENT (AMPERES) 4 I D , DRAIN CURRENT (AMPERES) GS =5.5V,6V &10V 5V 4 5 V =10V GS 6V 5V 5.5V 3 3 2 4.5V 2 4.5V 1 4V 0 100 200 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 10 0 1 4V 0 4 8 12 16 20 VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 0 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5 T = 25C J I D , DRAIN CURRENT (AMPERES) T = -55C J 8 V > I (ON) x R (ON)MAX. DS D DS 230 SEC. PULSE TEST T = +25C J T = +125C J 2 SEC. PULSE TEST NORMALIZED TO 2.0 V GS = 10V @ 0.5 I [Cont.] D 6 1.5 V =10V GS V =20V GS 4 1.0 2 T = +125C J T = +25C J 0 T = -55C J 0.5 2 4 6 8 VGS , GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 4 0 0.0 0 2 4 6 8 10 12 ID , DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.2 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) I D , DRAIN CURRENT (AMPERES) 1.1 3 APT1004RKN APT1004R2KN 1.0 2 0.9 1 0.8 50 75 100 125 150 TC , CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 0 25 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.4 0.7 -50 2.5 D D V GS = 10V VGS(TH), THRESHOLD VOLTAGE (VOLTS) (NORMALIZED) I = 0.5 I [Cont.] 2.0 1.2 1.5 1.0 1.0 0.8 0.5 0.6 050-0036 Rev C 0.0 -50 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 0 25 50 75 100 125 150 TC , CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 0.4 -50 -25 APT1004R/1004R2KN 60 I D , DRAIN CURRENT (AMPERES) 10,000 APT1004RKN 10 APT1004R2KN OPERATION HERE (ON) LIMITED BY R DS C, CAPACITANCE (pF) 10S 1,000 C iss APT1004RKN APT1004R2KN 100S 1 1mS T =+25C C T =+150C J SINGLE PULSE C oss 100 C rss 10mS 100mS DC 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 100 50 10 0 .1 1 5 10 50 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I = I [Cont.] D D 20 VGS , GATE-TO-SOURCE VOLTAGE (VOLTS) 16 V V DS =100V 12 =200V DS 20 10 5 T = +150C J T = +25C J 8 V DS =500V 4 2 1 10 20 30 40 50 Q g, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 0 .5 1.0 1.5 2.0 VSD , SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE TO-220AB Package Outline 10.67 (.420) 9.65 (.380) 5.33 (.210) 4.83 (.190) 6.86 (.270) 5.84 (.230) 16.51 (.650) 14.22 (.560) 3.43 (.135) 2.54 (.100) 4.09 (.161) Dia. 3.53 (.139) 1.40 (.020) 0.51 (.055) Drain 6.35 (.250) MAX. 14.73 (.580) 12.70 (.500) 1.14 (.045) 0.30 (.012) 2.92 (.115) 2.03 (.080) 4.83 (.190) 3.56 (.140) Gate Drain Source 1.14 (.045) 3-Plcs. 0.51 (.020) 2.29 (.090) 2.79 (.110) 4.83 (.190) 5.33 (.210) 1.78 (.070) 3-Plcs. 1.14 (.045) 050-0036 Rev C Dimensions in Millimeters and (Inches) |
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